This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …

We report quantum interference effects in the electrical conductance of chemical vapor
deposited graphene nanoconstrictions fabricated using feedback controlled electroburning …

While core–shell wire-based devices offer a promising path toward improved optoelectronic
applications, their development is hampered by the present uncertainty about essential …

Single crystalline 4H-SiC is a wide-gap semiconductor with optical properties that are
poised to enable new applications in MEMS and quantum devices. A number of key hurdles …

Understanding the limits of spatiotemporal carrier dynamics, especially in III-V
semiconductors, is key to designing ultrafast and ultrasmall optoelectronic components …

This paper describes the use of a Monte Carlo model incorporating a finite-element method
computing the electrostatic fields inside and outside a semiconductor, plus a ray-tracing …

We show that secondary electrons in a scanning electron microscope can provide important
information about spatial dopant distribution in pin GaN structures, with the highest contrast …

While the properties of surfaces and interfaces are crucial to modern devices, they are
commonly difficult to explore since the signal from the bulk often masks the surface …

Understanding nanoscale molecular order within organic electronic materials is a crucial
factor in building better organic electronic devices. At present, techniques capable of …

We calculate a universal shift in work function of 59.4 meV per decade of dopant
concentration change that applies to all doped semiconductors and from this use Monte …