A new approach to the fabrication of efficient heat sinks for GaN-based transistors is
demonstrated. A key feature of this work is the growth of polycrystalline diamond coating on …

Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading
dislocations and surface hexagonal hillocks, which degrade the performance and reliability …

Nanostructures based on buried interfaces and heterostructures are at the heart of modern
semiconductor electronics as well as future devices utilizing spintronics, multiferroics …

Room-temperature pulsed oscillation with a laser wavelength of 290 nm and a threshold
current density of 35 kA cm− 2 was achieved by fabricating a UV-B laser diode on a thick …

В статье излагается концепция создания природоподобной техносферы как
закономерного этапа научно-технологического развития цивилизации. Исследуются …

This paper describes the concept of creating a naturelike technosphere as a natural stage of
the scientific and technological development of civilization. The problems and results of the …

We investigated atomic scale chemical heterogeneity in β-(Al x Ga 1− x) 2 O 3 thin films with
different aluminum (Al) concentrations using atom probe tomography. Two film samples with …

A better understanding of the molecular beam epitaxy (MBE) grown AlGaN layers is crucial
for the development of UV emitters based on III-nitrides. In this work, the growth kinetics of …

With a view to supporting the development of ultra-violet light-emitting diodes and related
devices, the compositional, emission and morphology properties of Si-doped n-type Al x Ga …

We report the heteroepitaxial growth of single-crystalline bixbyite (In 1− x Ga x) 2 O 3 films
on (111)-oriented yttria-stabilized zirconia substrates using plasma-assisted molecular …