Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

Vertical uniformity of HgCdTe epilayer is a crucial parameter for infrared detector
engineering. In this work, backside illuminated infrared photoluminescence (PL) and …

In-plane distribution of band edge electronic structure of the narrow-gap arsenic (As)-doped
HgCdTe is a crucial topic fundamentally and technically for mid-infrared detector array but …

Infrared modulated photoluminescence (PL) spectra are recorded in the temperature range
of 11. 5-290 K for both as-grown and p-type annealed arsenic-doped narrow-gap HgCdTe …

Temperature (11–250 K) and excitation power (5–480 mW) dependent infrared
photoluminescence (PL) measurements are conducted on a HgTe/Hg 0.05 Cd 0.95 Te …

Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic
properties of semiconductor materials and structures. It is a simple non-destructive and …

Optical absorption and photoluminescence spectroscopies are standard tools for analysis of
HgHg 1− x Cd x Te epitaxial layers in terms of homogeneity of the mole-fraction (x). For …

The pixel-scale nonuniformity of the photoelectric response may be due either to the in-
plane electronic inhomogeneity of the narrowgap semiconductor or to the craft fluctuation …

Fast differential reflectance (FDR) spectroscopy has been proposed as a form of
photoreflectance (PR) measurement and employed for optical investigations of type I and II …

Abstract Resistance–voltage (R–V) curves of arsenic doped long-wavelength infrared
(LWIR) Mercury Cadmium Telluride (HgCdTe) photodiodes were measured in the …