Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …

Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Abstract Bismuth ferrite (BiFeO 3, BFO) as one of the few single-phase room-temperature
multiferroics, has aroused ever-increasing enthusiasm in research communities during the …

Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …

Ferroelectric materials have remained one of the major focal points of condensed matter
physics and materials science for over 50 years. In the last 20 years, the development of …

Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path
coupled to the surrounding polarization. They have been proposed for use as non-volatile …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

The charged domain wall is an ultrathin (typically nanosized) interface between two
domains; it carries bound charge owing to a change of normal component of spontaneous …

Erasable conductive domain walls in insulating ferroelectric thin films can be used for non-
destructive electrical read-out of the polarization states in ferroelectric memories. Still, the …