Integration of III-V lasers on Si for Si photonics
Abstract Development of Si photonic integrated circuits (PICs) has been impeded due to lack
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …
of efficient Si-based light-emitting sources. Because of their indirect bandgap, bulk Ge and …
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …
decades. Notable progress has recently been made in this research area, fueled by …
Superconducting optoelectronic circuits for neuromorphic computing
Neural networks have proven effective for solving many difficult computational problems, yet
implementing complex neural networks in software is computationally expensive. To explore …
implementing complex neural networks in software is computationally expensive. To explore …
Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)
Semiconductor III–V photonic crystal (PC) laser is regarded as a promising ultra-compact
light source with unique advantages of ultralow energy consumption and small footprint for …
light source with unique advantages of ultralow energy consumption and small footprint for …
Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon
Direct integration of high-performance laser diodes on silicon will dramatically transform the
world of photonics, expediting the progress toward low-cost and compact photonic …
world of photonics, expediting the progress toward low-cost and compact photonic …
Recent progress of quantum dot lasers monolithically integrated on Si platform
With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …
Recent progress of III–V quantum dot infrared photodetectors on silicon
Heterogeneous integration of III–V photodetectors on Si substrates offers great advantages
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
for manufacturing complementary metal-oxide semiconductor (CMOS) compatible photonic …
Origin of defect tolerance in InAs/GaAs quantum dot lasers grown on silicon
Z Liu, C Hantschmann, M Tang, Y Lu… - Journal of Lightwave …, 2019 - ieeexplore.ieee.org
High-performance III-V quantum-dot lasers monolithically grown on Si substrates have been
demonstrated as a promising solution to realize Si-based laser sources with very low …
demonstrated as a promising solution to realize Si-based laser sources with very low …
InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm
WQ Wei, JH Wang, B Zhang, JY Zhang… - Applied Physics …, 2018 - pubs.aip.org
Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by
homo-epitaxy on a U-shaped patterned Si (001) substrate. With in-situ III-V growth on such …
homo-epitaxy on a U-shaped patterned Si (001) substrate. With in-situ III-V growth on such …
[HTML][HTML] Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates
Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon
were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five …
were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five …