Electronic and optical properties of semiconductor and graphene quantum dots
Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …
First-principles insights into the spin-valley physics of strained transition metal dichalcogenides monolayers
Transition metal dichalcogenides (TMDCs) are ideal candidates to explore the manifestation
of spin-valley physics under external stimuli. In this study, we investigate the influence of …
of spin-valley physics under external stimuli. In this study, we investigate the influence of …
Large anisotropy of the spin-orbit interaction in a single InAs self-assembled quantum dot
S Takahashi, RS Deacon, K Yoshida, A Oiwa… - Physical review …, 2010 - APS
The anisotropy of the spin-orbit interaction (SOI) is studied for a single uncapped InAs self-
assembled quantum dot holding just a few electrons. The SOI energy is evaluated from …
assembled quantum dot holding just a few electrons. The SOI energy is evaluated from …
Effects of hydrostatic pressure and aluminum concentration on the conduction-electron factor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields
E Reyes-Gómez, N Raigoza, LE Oliveira - Physical Review B—Condensed …, 2008 - APS
The effects of hydrostatic pressure and aluminum concentration on the conduction-electron
effective Landé g factor in semiconductor Ga As-Ga 1− x Al x As quantum wells under in …
effective Landé g factor in semiconductor Ga As-Ga 1− x Al x As quantum wells under in …
The limits of near field immersion microwave microscopy evaluated by imaging bilayer graphene moiré patterns
Abstract Near field scanning Microwave Impedance Microscopy can resolve structures as
small as 1 nm using radiation with wavelengths of 0.1 m. Combining liquid immersion …
small as 1 nm using radiation with wavelengths of 0.1 m. Combining liquid immersion …
Optical detection of single-electron spin resonance in a quantum dot
M Kroner, KM Weiss, B Biedermann, S Seidl, S Manus… - Physical review …, 2008 - APS
We demonstrate optically detected spin resonance of a single electron confined to a self-
assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin …
assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin …
Voltage tunability of single-spin states in a quantum dot
Single spins in the solid state offer a unique opportunity to store and manipulate quantum
information, and to perform quantum-enhanced sensing of local fields and charges. Optical …
information, and to perform quantum-enhanced sensing of local fields and charges. Optical …
Anisotropy of electron and hole g-factors in (In, Ga) As quantum dots
A Schwan, BM Meiners, A Greilich… - Applied Physics …, 2011 - pubs.aip.org
The g-factor tensors of electron and hole in self-assembled (In, Ga) As/GaAs quantum dots
are studied by time-resolved ellipticity measurements in a three dimensional vector magnet …
are studied by time-resolved ellipticity measurements in a three dimensional vector magnet …
Electrically controllable tensors in quantum dot molecules
T Andlauer, P Vogl - Physical Review B—Condensed Matter and Materials …, 2009 - APS
We present a quantitative theoretical analysis of electron, hole, and exciton g tensors of
vertically coupled InAs/GaAs quantum dot pairs in external electric and magnetic fields. For …
vertically coupled InAs/GaAs quantum dot pairs in external electric and magnetic fields. For …
Large anisotropy of electron and hole factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
A detailed study of the g-factor anisotropy of electrons and holes in InAs/In 0.53 Al 0.24 Ga
0.23 As self-assembled quantum dots emitting in the telecom spectral range of 1.5–1.6 μ m …
0.23 As self-assembled quantum dots emitting in the telecom spectral range of 1.5–1.6 μ m …