In this work, a deep-UV photodetector based on a Sn-doped Ga2O3 (Sn: Ga2O3) thin film
grown by mist chemical vapor deposition (mist-CVD) technology on an α-Al2O3 substrate is …

To address the growing demand for wearable optoelectronic devices in secure
communication, environmental monitoring, biomedical, and military applications, the …

Ultraviolet C (UVC) photodetectors have garnered considerable attention recently because
the detection of UVC is critical for preventing skin damage in humans, monitoring …

Abstract β-phase gallium oxide (β-Ga 2 O 3) is attracting attention as a deep—ultraviolet
photodetector (PD) owing to its large band gap of 4.9 eV, almost direct band gap …

Abstract α-Ga 2 O 3 has gained increasing attention in the field of photodetectors because of
its wide bandgap and exceptional chemical and physical properties. Si-doped α-Ga 2 O 3 …

This study presents a novel and cost-effective technique for fabricating nitrogen-doped
crystalline α-Ga 2 O 3 and β-Ga 2 O 3 thin films under atmospheric pressure conditions …

We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet
(DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold …

An n-type amorphous Ga 2 O 3 thin film with a bandgap of 4.9 eV is formed using the Sn-
dopant spin-on-glass (SOG) method followed by a drive-in process at 400° C for 1 h in an Ar …

This study investigates the shift of the charge neutral point (CNP) of 700 nm-thick α-Ga2O3
metal–semiconductor-metal (MSM) devices in response to X-ray exposure and relaxation …

One-dimensional β-Ga 2 O 3 is expected for potential applications in electronics, sensors,
and optoelectronics. Gallium hydroxide (GaO (OH)) with different Cu doping was prepared …