A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

In the present paper, reported literature data on the grain-size dependence of resistivity of Ni
and Cu are critically evaluated by two conceptually different methods. One is the …

Mo (001) and Mo (011) layers with thickness d= 4–400 nm are sputter-deposited onto MgO
(001) and α-Al2O3 (11 2¯ 0) substrates and their resistivity is measured in situ and ex situ at …

The resistivity size effect in Ir is quantified with in situ and ex situ transport measurements at
295 and 77 K using epitaxial layers with thickness d= 5–140 nm deposited on MgO (001) …

Rh (001) and Rh (111) layers with thickness d= 8-181 nm are sputter deposited onto MgO
(001) and Al2O3 (112̅0) substrates and their resistivity ρ measured in situ and ex situ at …

The resistivity size effect in the ordered intermetallic CuTi compound is quantified using in
situ and ex situ thin film resistivity ρ measurements at 295 and 77 K, and density functional …

Epitaxial CuAl 2 (001) layers with thickness= 10.2–141 nm are deposited by co-sputtering
onto MgO (001) substrates at 300° C and their resistivity is measured in situ to quantify the …

In situ transport measurements on 10-nm-thick epitaxial Cu (001), Co (001), and Rh (001)
layers exhibit a characteristic increase in the sheet resistance ΔR s/R o= 43%, 10%, and 4 …

Epitaxial VNi 2 layers are deposited onto MgO (001) and their resistivity ρ measured as a
function of layer thickness d= 10.5–138 nm to quantify the resistivity size effect. The layers …

In situ transport measurements on 5.8–92.1 nm thick epitaxial Ti 4 SiC 3 (0001) layers are
used to experimentally verify the previously predicted low resistivity scaling. Magnetron co …