Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
Metal‐assisted chemical etching of silicon in oxidizing HF solutions: origin, mechanism, development, and black silicon solar cell application
C Huo, J Wang, H Fu, X Li, Y Yang… - Advanced Functional …, 2020 - Wiley Online Library
Metal‐assisted chemical etching (MacEtch) of silicon in oxidizing hydrofluoric acid (HF)
solutions has emerged as a prominent top‐down micro/nanofabrication approach for a wide …
solutions has emerged as a prominent top‐down micro/nanofabrication approach for a wide …
β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching
In this work, β-Ga 2 O 3 fin field-effect transistors (FinFETs) with metalorganic chemical
vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga 2 O …
vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating β-Ga 2 O …
Balanced performance for β-Ga2O3 solar blind photodetectors: The role of oxygen vacancies
J Wang, Y Xiong, L Ye, W Li, G Qin, H Ruan, H Zhang… - Optical Materials, 2021 - Elsevier
Abstract Gallium oxide (Ga 2 O 3) is a natural candidate material for next-generation solar-
blind photodetectors (PDs). At present, it remains challenging to tune a balanced …
blind photodetectors (PDs). At present, it remains challenging to tune a balanced …
Structuring of Si into multiple scales by metal‐assisted chemical etching
RP Srivastava, DY Khang - Advanced Materials, 2021 - Wiley Online Library
Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …
[HTML][HTML] Anisotropic etching of β-Ga2O3 using hot phosphoric acid
We report a systematic investigation on the anisotropic etching behavior of β-Ga 2 O 3. A
wagon wheel pattern was designed and fabricated on (010)-oriented β-Ga 2 O 3 substrates …
wagon wheel pattern was designed and fabricated on (010)-oriented β-Ga 2 O 3 substrates …
Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism
Abstract β-Ga 2 O 3, a promising ultra-wide bandgap material for future high-power
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …
High Aspect Ratio β-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching
β-Ga2O3, with a bandgap of∼ 4.6–4.9 eV and readily available bulk substrates, has
attracted tremendous interest in the wide bandgap semiconductor community. Producing …
attracted tremendous interest in the wide bandgap semiconductor community. Producing …
[HTML][HTML] Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing
Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …
Simultaneously improved sensitivity and response speed of β-Ga2O3 solar-blind photodetector via localized tuning of oxygen deficiency
Recently, β-Ga 2 O 3 solar-blind photodetectors (PDs) have been extensively investigated
for a wide range of civil and military applications. Among them, the metal-semiconductor …
for a wide range of civil and military applications. Among them, the metal-semiconductor …