Abstract Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene,
and transition metal dichalcogenides have attracted intense research attention because of …

In this letter, a novel Core-Substrate Gate-All-Around (CSGAA) nanowire structure has been
proposed, investigated and simulated systematically based on 3D numerical simulation …

In this work, the authors study the performance of black phosphorus double gate MOSFET
(BP‐DGMOSFET) within the ballistic limit. A hybrid simulation technique involving both …

Transition metal dichalcogenides are nowadays appealing to researchers for their excellent
electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS 2 are …

In this paper, a charge plasma-based phosphorene double-gate tunnel FET (CP-
BPDGTFET) is investigated. A hybrid simulation technique involving both atomistic and …

For the first time, we examine the performance of gate-all-around nanosheet field effect
transistor (GAA NS FET) with both monolayer (ML) and bilayer (BL) molybdenum disulfide …

New technologies are imperative for the extraordinary development of connectivity and
communications in modern technological society. Two-dimensional (2D) materials like …

21.2. 1 Crystal Structure and Properties.......................................................................... 21.2. 2
Fabrication Methods and Characterization.......................................................... 21.2. 3 …