III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Since the 1960s advances in electronic and optoelectronic device technologies have been
primarily orchestrated by III-V semiconductors, which have led to an age of consumer …

Wurtzite Al 1− x Sc x N thin films with scandium Sc concentrations up to x= 0.41 were
prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between …

Partial substitution of aluminium by scandium in the wurtzite structure of aluminium nitride
(AlN) leads to a large increase of the piezoelectric response by more than a factor of 2 …

An understanding of the heterostructural implications on alloying in the aluminum nitride-
scandium nitride system (Al 1− x Sc x N) can highlight opportunities and design principles …

The resistivity of nanoscale metallic conductors is orientation dependent, even if the bulk
resistivity is isotropic and electron scattering cross-sections are independent of momentum …

As electronic devices shrink down to their ultimate limit, the fundamental understanding of
interfacial thermal transport becomes essential in thermal management. However, a …

NbN x layers were deposited by reactive magnetron sputtering on MgO (001) substrates in
0.67 Pa pure N 2 at T s= 600–1000° C. T s≥ 800° C leads to epitaxial layers with a cube-on …

Over the past decade, ultraviolet (UV) detection has been a subject of major interest for both
research scientists and engineers because of its important applications in both the civil and …

Abstract Tungsten nitride layers, 1.45-μm-thick, were deposited by reactive magnetron
sputtering on MgO (001), MgO (111), and Al 2 O 3 (0001) in 20 mTorr N 2 at T s= 500–800° …