Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Polarity in oxide nano-objects
C Noguera, J Goniakowski - Chemical reviews, 2013 - ACS Publications
Polar surfaces of compound materials have been the subject of intense activity in the past.
Electrostatic arguments, based on a model of rigid charges, predict that they should have an …
Electrostatic arguments, based on a model of rigid charges, predict that they should have an …
Polarity of oxide surfaces and nanostructures
J Goniakowski, F Finocchi… - Reports on Progress in …, 2007 - iopscience.iop.org
Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …
overwhelming probability that the resulting surface corresponds to a polar termination and is …
Controlled growth of high‐quality ZnO‐based films and fabrication of visible‐blind and solar‐blind ultra‐violet detectors
ZnO is a wide‐bandgap (3.37 eV at room temperature) oxide semiconductor that is attractive
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …
for its great potential in short‐wavelength optoelectronic devices, in which high quality films …
Impact of sapphire nitridation on formation of Al-polar inversion domains in N-polar AlN epitaxial layers
N Stolyarchuk, T Markurt, A Courville, K March… - Journal of Applied …, 2017 - pubs.aip.org
In this work, we study the basic processes during the initial stages of growth which control
polarity in N-polar AlN films grown on c-plane sapphire substrates by metalorganic chemical …
polarity in N-polar AlN films grown on c-plane sapphire substrates by metalorganic chemical …
Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0. 96Mn0. 04 thin films
Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been
investigated by various transmission electron microscopy techniques. Both the mysterious …
investigated by various transmission electron microscopy techniques. Both the mysterious …
ZnO nanofiber (NFs) growth from ZnO nanowires (NWs) by controlling growth temperature on flexible Teflon substrate by CBD technique for UV photodetector
In this study, ZnO nanofibers (ZnO NFs) were successfully grown for the first time on Teflon
substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were …
substrates using CBD technique. The well-aligned ZnO nanorods (ZnO NRs) were …
Confinement effects in ultrathin ZnO polymorph films: Electronic and optical properties
Relying on generalized-gradient and hybrid first-principles simulations, this work provides a
complete characterization of the electronic properties of ZnO ultrathin films, cut along the …
complete characterization of the electronic properties of ZnO ultrathin films, cut along the …
Polarity control of ZnO films on (0001) Al2O3 by Cr-compound intermediate layers
This letter presents a reliable and very easy method for selective growth of polarity
controlled ZnO films on (0001) Al 2 O 3 substrates by plasma-assisted molecular-beam …
controlled ZnO films on (0001) Al 2 O 3 substrates by plasma-assisted molecular-beam …
Mn behavior in Ge0. 96Mn0. 04 magnetic thin films grown on Si
Mn behaviors in the Ge 0.96 Mn 0.04 thin films grown on Si (001) substrates by molecular
beam epitaxy were investigated by high resolution transmission electron microscopy …
beam epitaxy were investigated by high resolution transmission electron microscopy …