Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions
Q Zeng, Z Yang, X Wang, S Li… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
With the continuous development and progress of science and technology, the third-
generation semiconductor power devices (SPDs) represented by SiC MOSFETs have …
generation semiconductor power devices (SPDs) represented by SiC MOSFETs have …
Space radiation effects on SiC power device reliability
JM Lauenstein, MC Casey, RL Ladbury… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Heavy-ion radiation can result in silicon carbide power device degradation and/or
catastrophic failure. Test procedures and data interpretation must consider the impact that …
catastrophic failure. Test procedures and data interpretation must consider the impact that …
Displacement damage and total ionisation dose effects on 4H‐SiC power devices
P Hazdra, S Popelka - IET Power Electronics, 2019 - Wiley Online Library
A comprehensive study of displacement damage and total ionisation dose effects on 4H‐
silicon carbide power devices is presented. Power diodes and transistors produced by …
silicon carbide power devices is presented. Power diodes and transistors produced by …
Opportunities in single event effects in radiation-exposed SiC and GaN power electronics
Radiation effects have a critical impact on the reliability of SiC and GaN power electronics
and must be understood for space and avionics applications involving exposure to various …
and must be understood for space and avionics applications involving exposure to various …
Impact of heavy ion particle strike induced single event transients on conventional and π-Gate AlGaN/GaN HEMTs
This paper presents an extensive Victory TCAD based assessment to evaluate the device
performance under heavy ion particle strike induced single event effects (SEEs). The impact …
performance under heavy ion particle strike induced single event effects (SEEs). The impact …
Study of self-heating and high-power microwave effects for enhancement-mode p-gate GaN HEMT
Y Qin, C Chai, F Li, Q Liang, H Wu, Y Yang - Micromachines, 2022 - mdpi.com
The self-heating and high-power microwave (HPM) effects that can cause device heating
are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors …
are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors …
Impact of different gate biases on irradiation and annealing responses of SiC MOSFETs
D Hu, J Zhang, Y Jia, Y Wu, L Peng… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
The irradiation and postirradiation annealing responses of SiC metal-oxide-semiconductor
field-effect transistors (MOSFETs) are investigated under the application of different positive …
field-effect transistors (MOSFETs) are investigated under the application of different positive …
Special Degradation Effects of 60Co γ-rays Irradiation on Electrical Parameters of SiC MOSFETs
H Feng, X Liang, X Pu, S Yang, J Feng… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
The static and dynamic characteristics of silicon carbide (SiC) metal–oxide–semiconductor
field-effect transistors (MOSFETs) under gate and drain biases exhibit differential …
field-effect transistors (MOSFETs) under gate and drain biases exhibit differential …
TCAD based investigation of single event transient effect in double channel AlGaN/GaN HEMT
In this paper, investigation of Double Channel (DC) AlGaN/GaN HEMT has been presented
using extensive TCAD simulation under the influence of Single Event Transient (SET) effect …
using extensive TCAD simulation under the influence of Single Event Transient (SET) effect …
Extended exposure of gallium nitride heterostructure devices to a simulated Venus environment
Further development of harsh environment electronics capable of uncooled operation under
Venus surface atmospheric conditions (~ 460° C,~ 92 bar, corrosive) would enable future …
Venus surface atmospheric conditions (~ 460° C,~ 92 bar, corrosive) would enable future …