Progress and challenges towards terahertz CMOS integrated circuits
E Seok, D Shim, C Mao, R Han… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
Key components of systems operating at high millimeter wave and sub-millimeter
wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator …
wave/terahertz frequencies, a 140-GHz fundamental mode voltage controlled oscillator …
A 122 GHz sub-harmonic mixer with a modified APDP topology for IC integration
Y Sun, CJ Scheytt - IEEE Microwave and Wireless …, 2011 - ieeexplore.ieee.org
This letter presents a modified passive subharmonic mixer (SHM) topology based on an anti-
parallel-diode-pair (APDP). It features a differential intermediate frequency output facilitating …
parallel-diode-pair (APDP). It features a differential intermediate frequency output facilitating …
A low-reverse-recovery-charge superjunction MOSFET with P-base and N-pillar Schottky contacts
P Li, J Guo, Z Lin, S Hu, C Shi… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
A superjunction metal-oxide-semiconductor field-effect transistor (SJ-MOSFET) with P-base
and N-pillar Schottky contacts is proposed and investigated in this article. The dual Schottky …
and N-pillar Schottky contacts is proposed and investigated in this article. The dual Schottky …
Broadband CMOS Schottky-diode star mixer using coupled-CPW Marchand dual-baluns
YC Hsiao, C Meng, YH Peng - IEEE Microwave and Wireless …, 2017 - ieeexplore.ieee.org
A broadband CMOS Marchand dual-balun using stacked broadside couplers for low odd-
mode impedance with surrounded ground planes for high even-mode impedance is …
mode impedance with surrounded ground planes for high even-mode impedance is …
Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation
The low‐temperature‐processed amorphous oxide semiconductors (AOSs) exhibit
remarkable potentials in large‐area, flexible, and hybrid‐integrated electronics, while the …
remarkable potentials in large‐area, flexible, and hybrid‐integrated electronics, while the …
60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 Foundry CMOS Technology
HJ Wei, C Meng, TW Wang, TL Lo… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Due to the benefits of Schottky diodes, 0.18-μm CMOS technology is being promoted for
millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters …
millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters …
CMOS terahertz receivers
Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide
Semiconductor) integrated circuits technology an alternative for realizing capable and …
Semiconductor) integrated circuits technology an alternative for realizing capable and …
Symmetric varactor in 130-nm CMOS for frequency multiplier applications
D Shim - IEEE Electron Device Letters, 2011 - ieeexplore.ieee.org
A symmetric varactor (SVAR) in 130-nm digital complementary metal-oxide-semiconductor
(CMOS) for frequency multiplier applications with the maximum cutoff frequency of~ 320 …
(CMOS) for frequency multiplier applications with the maximum cutoff frequency of~ 320 …
150 GHz complementary anti-parallel diode frequency tripler in 130 nm CMOS
D Shim, C Mao, S Sankaran - IEEE microwave and wireless …, 2011 - ieeexplore.ieee.org
The first complementary anti-parallel Schottky diode frequency tripler in CMOS is
demonstrated. The tripler exhibits ∼34\mathchar"702D\rmdB minimum conversion loss …
demonstrated. The tripler exhibits ∼34\mathchar"702D\rmdB minimum conversion loss …
Devices and circuits in CMOS for THz applications
Recent advances of CMOS technology and circuits have made it an alternative for realizing
capable and affordable THz systems. With process and circuit optimization, it should be …
capable and affordable THz systems. With process and circuit optimization, it should be …