Metal-oxide nanomaterials (MONs) have gained considerable interest in the construction of
flexible/wearable sensors due to their tunable band gap, low cost, large specific area, and …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

The development of NO 2 gas sensors with lower operating temperature and good thermal
stability is always a challenge to solve. In this work, 2D loose porous ZnO/GaN …

In the last two decades, GaN nanostructures of various forms like nanowires (NWs),
nanotubes (NTs), nanofibers (NFs), nanoparticles (NPs) and nanonetworks (NNs) have …

Comprehensive knowledge of the gas sensor mechanisms demands a detailed command of
the physicochemical properties and features of the active sensing materials and their …

The present review concerns thin film field effect transistor (TFT)-based gas sensors with
special emphasis on material synthesis, electrical characterizations and sensing properties …

Herein, n–n type one dimensional ZnO@ In2O3 heterojunction nanowires have been
developed and their local electron transport properties during trace-level NO2 gas sensing …

Group III nitrides are attracting considerable attention as promising materials for a variety of
applications due to their wide bandgap, high electron mobility, high thermal stability, and …

Gas sensors are essential for ensuring public safety and improving quality of life. Room-
temperature gas sensors are notable for their potential economic benefits and low energy …

A unique band-to-band tunneling (BTBT) phenomenon has been discovered in heavily
boron-doped diamond (BDD)/SnO 2 p+-n heterojunctions. This phenomenon can be …