Carbon nanotube field effect transistors (CNTFETs) have gained remarkable attention in
modern fields, as one of the promising candidates for replacing conventional MOSFETs …

In this article, a novel arch-shaped asymmetrical reconfigurable field-effect transistor (RFET)
has been proposed for the first time. By adding an arch-shaped-source region in a silicon …

Design and simulation of variable gain analog buffer amplifier using single gate
reconfigurable field-effect transistor (SG-RFET) with strained silicon channel are proposed …

Design and simulation of reconfigurable circuits using a single gate reconfigurable field-
effect transistor (SG-RFET) are presented. The device characteristics of SG-RFET is …

The paper investigates the design and performance of a novel palladium gated‐polarity
controllable Field Effect Transistor (FET)(PC‐FET) for hydrogen gas sensing applications. In …

In the present work, a comprehensive analytical model for surface potential and drain
current has been developed for double gate silicon-germanium channel dual programmable …

In the present work, detailed analyses are carried out to study the impact of temperature on
the device performance of a single-gated polarity-controllable–ferroelectric–field-effect …

Analog buffer amplifier configurations capable of driving heavy resistive load using different
operational transconductance amplifier (OTA) are presented in this paper. The OTA CMOS …

Background and Objectives: In this study, a reconfigurable field-effect transistor has been
developed utilizing a multi-doped source-drain region, enabling operation in both n-mode …

This chapter introduces the basic tool flow of the Sentaurus technology computer-aided
design (TCAD) tool and explores the device characteristic simulations and circuit-level …