A method for manufacturing a semiconductor substrate including: epitaxially growing a
silicon germanium (SiGe) film on a silicon (Si) substrate by a chemical vapor deposition …

BACKGROUND 0001. The present invention relates to the fabrication of wafers, in particular
those of the strained silicon on insulator (sSOI) type. 0002. Several techniques exist for …

A method for forming a semiconductor structure comprising a thin layer of semiconductor
material on a receiver wafer is disclosed. The method comprises removing a thickness of …

The invention relates to a treatment method of a structure comprising a thin Gelayer on a
Substrate, said layer having been previously bonded with the substrate, the method com …

A method of forming a structure that includes a removed layer taken from a donor wafer
donor wafer that includes a first layer of Si 1-x Ge x and a second layer of Si 1-y Ge y. The …

Int. Cl. Methods (and semiconductor substrates produced therefrom p HOIL 2L/30(2006.01)
of fabricating (n-1) SDOI substrates using in wafers is HOIL 2L/216(2006.01) described. A …

A method for minimizing thickness variation of a substrate in an anneal step and achieving
the smoothing of the surface of the substrate. Specifically provided is a method for treating …

A method of producing a semiconductor structure having a buried insulating layer having a
thickness between 2 and 25 nm, by: forming at least one insulating layer on a surface of a …

Embodiments of the invention relate to a process for fabricating a silicon-on-insulator
structure comprising the following steps: providing a donor substrate and a support …

Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk
region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk …