Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator

J Li, Y Zhang, J Wang, H Yang, X Zhou… - … Applied Materials & …, 2023 - ACS Publications
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …

A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials

S Ge, D Sang, L Zou, Y Yao, C Zhou, H Fu, H Xi, J Fan… - Nanomaterials, 2023 - mdpi.com
Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices
exhibit size-dependent and novel photoelectric performance due to their quantum limiting …

[HTML][HTML] Thickness and surface profiling of optically transparent and reflecting samples using lens-less self-referencing digital holographic microscopy

S Utadiya, V Trivedi, K Bhanderi, M Joglekar… - Applied Surface Science …, 2023 - Elsevier
Thickness and surface profiling of transparent/semi-transparent specimens are vital in
various applications, including electronics, optics, healthcare, and biotechnology. Surface …

Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO2/IGZO Thin-Film Transistors

CH Choi, T Kim, MJ Kim, SH Yoon… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, the mechanism of stability in amorphous indium-gallium-zinc oxide (-IGZO)
thin-film transistors (TFTs) with a natural length of 8 nm was investigated from the …

Ultra-thin top-gate insulator of atomic-layer-deposited HfOx for amorphous InGaZnO thin-film transistors

Y Guan, Y Zhang, J Li, J Li, Y Zhang, Z Wang… - Applied Surface …, 2023 - Elsevier
In recent years, high-k gate dielectrics have attracted increasing attention in amorphous
oxide semiconductor (AOS) thin-film transistors (TFTs), due to the urge for stronger gate …

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide

J Jin, X Lin, J Zhang, J Lee, Z Xiao… - Advanced Electronic …, 2023 - Wiley Online Library
Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent
device performance, and bias stability are highly desirable for portable and wearable …

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

J Li, Y Guan, J Li, Y Zhang, Y Zhang, MS Chan… - …, 2023 - iopscience.iop.org
To strengthen the downscaling potential of top-gate amorphous oxide semiconductor (AOS)
thin-film transistors (TFTs), the ultra-thin gate insulator (GI) was comparatively implemented …

Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment

J Zhang, H Zhao, X Ye, M Jia, G Lin… - … Applied Materials & …, 2024 - ACS Publications
Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging
applications such as flexible displays, radio-frequency identification tags, sensors, and back …

High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies

C Samanta, S Yuvaraja, T Zhama, H Zhao… - ACS Applied …, 2024 - ACS Publications
The role of surface contamination, along with surface oxygen vacancies, plays a key role in
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …

Low voltage-driven, high-performance TiO 2 thin film transistors with MHz switching speed

X Chen, J Ni, W Yang, S Ke, M Zhang - RSC advances, 2024 - pubs.rsc.org
High-speed circuits based on thin film transistors (TFTs) show promising potential
applications in biomedical imaging and human–machine interactions. One of the critical …