Beta-Gallium Oxide Material and Device Technologies
M Higashiwaki, MH Wong - Annual Review of Materials …, 2024 - annualreviews.org
Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …
spanning about 70 years; however, it has attracted little attention as a semiconductor for a …
1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers
Abstract Large area (1 mm 2) vertical NiO/β n-Ga 2 O/n+ Ga 2 O 3 heterojunction rectifiers
are demonstrated with simultaneous high breakdown voltage and large conducting currents …
are demonstrated with simultaneous high breakdown voltage and large conducting currents …
Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
B Wang - 2024 - vtechworks.lib.vt.edu
Abstract Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of
4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium …
4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium …
[PDF][PDF] 1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers
B Wang, H Wang, C Wang, Y Zhang, S Luan - 2023 - che.ufl.edu
Large area (1 mm2) vertical NiO/β n-Ga2O/n+ Ga2O3 heterojunction rectifiers are
demonstrated with simultaneous high breakdown voltage and large conducting currents …
demonstrated with simultaneous high breakdown voltage and large conducting currents …