Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

This paper presents a novel ultra-low power yet high-performance device and circuit design
paradigm for implementing ternary logic based circuits using Gate-Overlap Tunnel FETs …

This paper investigates a method to suppress the ambipolar current I amb effectively,
enhance the device performance with higher on current I on, lower off current I off, lower …

In this article, for the first time, an asymmetric U-shaped-gated tunnel FET (AU-TFET), with a
unique vertical channel epilayer, at sub-7-nm technology node, has been proposed and …

Recent researches have indicated that the gate-overlap tunnel FETs (GOTFETs) exhibit
double the on-currents I on and one-tenth the off-currents I off than the equally sized …

This paper presents a highly efficient ternary flash ADC, designed using the innovative gate-
overlap tunnel FET (GOTFET) at the 45 nm technology node. The proposed GOTFETs have …

In this work, we propose and investigate a new pocket‐based Si0. 55Ge0. 45/Si gate normal
tunnel FET design employing a gate over source with a single lateral pocket (GSLP) with …

This paper introduces an innovative Gate-Overlap Tunnel FET (GOTFET) device which is an
advanced TFET engineered to yield around double the on current I on, while the off current I …

Energy saving is a most promising sector of research and development. Nowadays, energy
saving or low power is becoming a critical challenge that is most important for the future of …

This paper presents a double‐gate line‐tunneling field‐effect transistor (DGLTFET) device
optimized for superior analog performance. DGLTFET has thrice the on currents I on, at least …