This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide
semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self …

Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been
widely investigated for their tuneable electronic properties. There is a large spectrum of …

Program/Erase (P/E) cycling endurance in poly-Si/Al 2 O 3/SiN/SiO 2/Si (SANOS) memories
is systematically studied. Cycling-induced trap generation, memory window (MW) closure …

A simple and low-cost process of embedding metal nanocrystals as charge storage centers
within a dielectric is demonstrated to address leakage issues associated with the scaling of …

Advanced floating body Z-RAM memory cells are studied. In particular, the scalability of the
cells is investigated. First, a Z-RAM cell based on a 50 nm gate length double-gate structure …

The second major portion of semiconductor production is devoted to memory products. In
2007, the worldwide memory chip industry including SRAM (static random access memory) …

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25㎛
embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic …

본 연구는 Charge Trap Flash Memory 에서 Charge Trap Layer 로 일반적으로 사용하고 있는
SiN 에 SiN 대비 High Conduction Band Barrier 를 가지는 Al2O3 층을 삽입하여 소자의 …

The demand for high-capacity, low-power memory is increasing rapidly as modern portable
electronic devices boost performance while decreasing in size. Due to its many advantages …

I thank the Economic Development Board-Joint Industrial Programme and Globalfoundries
Singapore Pte Ltd for the research scholarship, for offering me the wonderful opportunity to …