Photonic and optoelectronic devices have been limited in most two-dimensional (2D)
materials. Researchers have attempted diverse device structures, such as introducing some …

Ferroelectric memory devices with fast-switching speed and ultra-low power consumption
have been recognized as promising building blocks for brain-like neuromorphic computing …

Following the initial report on ferroelectricity in hafnia (HfO2) more than a decade ago, the
researchers' interest in this intriguing material system has constantly increased due to the …

This article is dedicated to HfO2‐based ferroelectrics applications in nanoelectronics,
especially to topics not well developed up to now, such as microwaves, energy harvesting …

To date, various kinds of memristors have been proposed as artificial neurons and synapses
for neuromorphic computing to overcome the so-called von Neumann bottleneck in …

In this article, a two-atom-thick diode based on 2-D materials is presented for microwave
detection. The diode consists of a molybdenum disulfide monolayer/graphene monolayer …

Various lithography techniques have been widely used for the fabrication of next-generation
device applications. Micro/nanoscale pattern structures formed by lithographic methods …

While technologically challenging, the integration of ferroelectric thin films with graphene
spintronics potentially allows the realization of highly efficient, electrically tunable …

Resistive switching (RS) devices have great application prospects in the emerging memory
field and neuromorphic field, but their stability and unclear RS mechanism limit their relevant …

Although technologically challenging, the integration of ferroelectric thin films with graphene
spintronics potentially allows the realization of highly efficient, electrically tuneable, non …