The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the
key to the realization of fully functional photonic-integrated circuits. Despite several years of …

Heavy n-type doping has been proposed as a route to achieve positive optical gain in
germanium layers since it is supposed to enhance the Γ c carrier density. Nevertheless, the …

Tensile germanium microstrips are candidate as gain material in Si-based light emitting
devices due to the beneficial effect of the strain field on the radiative recombination rate. In …

A direct bandgap can be engineered in Ge-rich group-IV alloys by increasing Sn content
and by introducing tensile strain in GeSn. Here, we combine these two routes in quantum …

We consider a device concept for edge-emitting lasers based on strained germanium
microstrips. The device features an inhomogeneous tensile strain distribution generated by …

The Lateral-Photovoltage-Scanning-Method (LPS) operates well for Si, Ge and Si_ {1–x}–
Ge_x for an analysis in defect regions below one part per million, where Secondary Ion …

We design a CMOS-compatible Distributed Bragg Reflector (DBR) laser based on highly
uniaxial tensile stressed germanium. Our design first incorporates three critical elements …

We discuss analytical and numerical methods for the optimization of optoelectronic devices
by performing optimal control of the PDE governing the carrier transport with respect to the …

We derive an optoelectronic model based on a gradient formulation for the relaxation of
electron-, hole-and photon-densities to their equilibrium state. This leads to a coupled …