Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

The emergence of artificial intelligence has represented great potential in solving a wide
range of complex problems. However, traditional general-purpose chips based on von …

Abstract 3D monolithic integration of logic and memory has been the most sought after
solution to surpass the Von Neumann bottleneck, for which a low-temperature processed …

With the increasing demand for artificially intelligent hardware systems for brain-inspired in-
memory and neuromorphic computing, understanding the underlying mechanisms in the …

Different from nonvolatile memory applications, neuromorphic computing applications utilize
not only the static conductance states but also the switching dynamics for computing, which …

In this paper, modeling of memristor has been carried out contemplating the temperature
effect on its various parameters. A relationship is established between temperature and …

Intrinsic variability observed in resistive-switching devices (cycle-to-cycle and device-to-
device) is widely recognised as a major hurdle for widespread adoption of Resistive RAM …

We present a comprehensive phenomenological model for the crossbar integrated metal-
oxide continuous-state memristors. The model consists of static and dynamic equations …

To enable fast and accurate models of SiC MOSFETs for transient simulation, a hybrid data-
driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling …

This paper presents a memristive device model capable of accurately matching a wide
range of characterization data collected from a tantalum oxide memristor. Memristor models …