A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Recent advances on neuromorphic devices based on chalcogenide phase‐change materials

M Xu, X Mai, J Lin, W Zhang, Y Li, Y He… - Advanced Functional …, 2020 - Wiley Online Library
Traditional von Neumann computing architecture with separated computation and storage
units has already impeded the data processing performance and energy efficiency, calling …

[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Phase-change materials for non-volatile memory devices: from technological challenges to materials science issues

P Noé, C Vallée, F Hippert, F Fillot… - … Science and Technology, 2017 - iopscience.iop.org
Chalcogenide phase-change materials (PCMs), such as Ge-Sb-Te alloys, have shown
outstanding properties, which has led to their successful use for a long time in optical …

The crystal orbital Hamilton population (COHP) method as a tool to visualize and analyze chemical bonding in intermetallic compounds

S Steinberg, R Dronskowski - Crystals, 2018 - mdpi.com
Recognizing the bonding situations in chemical compounds is of fundamental interest for
materials design because this very knowledge allows us to understand the sheer existence …

Interfacial phase-change memory

RE Simpson, P Fons, AV Kolobov, T Fukaya… - Nature …, 2011 - nature.com
Phase-change memory technology relies on the electrical and optical properties of certain
materials changing substantially when the atomic structure of the material is altered by …

Phase‐Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization

XB Li, NK Chen, XP Wang… - Advanced Functional …, 2018 - Wiley Online Library
To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …

Phase-change and redox-based resistive switching memories

DJ Wouters, R Waser, M Wuttig - Proceedings of the IEEE, 2015 - ieeexplore.ieee.org
This paper addresses the two main resistive switching (RS) memory technologies: phase-
change memory (PCM) and redox-based resistive random access memory (ReRAM). It will …

Interface formation of two-and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices

J Momand, R Wang, JE Boschker, MA Verheijen… - Nanoscale, 2015 - pubs.rsc.org
GeTe–Sb2Te3 superlattices are nanostructured phase-change materials which are under
intense investigation for non-volatile memory applications. They show superior properties …

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

Y Xu, X Wang, W Zhang, L Schäfer, J Reindl… - Advanced …, 2021 - Wiley Online Library
Tailoring the degree of disorder in chalcogenide phase‐change materials (PCMs) plays an
essential role in nonvolatile memory devices and neuro‐inspired computing. Upon rapid …