Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3, Yb2O3, and HfO2 MOS-based devices
The unique physical, chemical, and electronic properties of rare earth oxides have been of
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …
immense interest to replace SiO 2 as a dielectric material in metal–oxide–semiconductor …
Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics
A Kahraman, H Karacali, E Yilmaz - Journal of Alloys and Compounds, 2020 - Elsevier
This study presents comprehensive results on the changes of the crystal properties, surface
morphology, chemical composition and bonding structures based on X-ray photoelectron …
morphology, chemical composition and bonding structures based on X-ray photoelectron …
Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors
In this work, Er 2 O 3 films deposited by electron beam (E-beam) evaporation technique
were annealed at 450° C, 550° C, and 650° C in N 2 atmosphere for 30 min. We then …
were annealed at 450° C, 550° C, and 650° C in N 2 atmosphere for 30 min. We then …
The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure
In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping
memory device by RF magnetron sputtering technique. The structural and electrical …
memory device by RF magnetron sputtering technique. The structural and electrical …
The relationship between structural and electrical properties of the post-deposition annealed Er2O3/n-Si hetero-structures
This study presents comprehensive results on the structural modifications of Er 2 O 3/n-Si
hetero-structures under post-deposition annealing (PDA) and the effects of these changes …
hetero-structures under post-deposition annealing (PDA) and the effects of these changes …
Effect of oxide and interface traps on electrical characteristics of post-deposition annealed HfSiO4/n-Si structures
A Kahraman, E Yilmaz - Semiconductor Science and Technology, 2021 - iopscience.iop.org
This study presents detailed results on the modifications in chemical composition, defective
bonds, crystal properties based on x-ray photoelectron spectroscopy (XPS) depth profiles …
bonds, crystal properties based on x-ray photoelectron spectroscopy (XPS) depth profiles …
Dose responses of the SiO2 used in radiation sensors in field effect transistor form
Aim: To investigate the structural changes in the SiO 2 (silicon dioxide) layer, which is the
sensitive region of the RadFET radiation sensors used in the medical field, and to elaborate …
sensitive region of the RadFET radiation sensors used in the medical field, and to elaborate …
Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC
OB Okhrimenko, YY Bacherikov… - Semiconductor …, 2023 - elibrary.kubg.edu.ua
The relationship between internal mechanical stresses, surface morphology, nanoscale
electrical properties, and optical characteristics in TiO2, Gd2O3, Er2O3, and SiO2 thin films …
electrical properties, and optical characteristics in TiO2, Gd2O3, Er2O3, and SiO2 thin films …
Yb2O3/SiO2 yığın kapı oksit tabakasının MOS tabanlı radyasyon sensörlerinde duyar bölge olarak kullanılabilirliğinin araştırılması
B Morkoç - 2020 - search.proquest.com
Bu çalışmada, Yb 2 O 3 ile n-Si arasına konulacak SiO2 katmanın arayüzey kalitesine etkisi
ve Yb 2 O 3/SiO 2 yığın kapı oksit tabakasının MOS tabanlı radyasyon sensörlerinde duyar …
ve Yb 2 O 3/SiO 2 yığın kapı oksit tabakasının MOS tabanlı radyasyon sensörlerinde duyar …