There is an emergent demand for high-flexibility, high-sensitivity and low-power strain
gauges capable of sensing small deformations and vibrations in extreme conditions …

In the present framework, the TiO 2 thin film at different thicknesses (where d= 100, 120, 140,
160, 180, and 200 nm) has been successfully synthesized using the well-known thermal …

Because the previous works on Silver Selenide (AgSe) thin films were insufficient,
incomplete, and lacking in-depth, the current study explores deeper into AgSe thin films. The …

In this framework, the ZnSe layer was prepared via the well-known thermal evaporation
method at various thicknesses. The thicknesses of the ZnSe layer were monitored by the …

In order to obtain detailed information about the current-transport mechanisms (CTMs) in the
Au/(Zn-doped) PVA/n-GaAs SBDs, the forward and reverse bias current–voltage (I–V) …

The graphene oxide–Fe 3 O 4 nanoparticles (GO–Fe 3 O 4) nanocomposites/n-Si
heterojunctions were fabricated and their device performance was examined through the …

In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO 2/n-
GaAs structures were investigated using capacitance–voltage (CV) and conductance …

This paper presents detailed analysis of forward and reverse bias IV and CV characteristics
of Al/Al 2 O 3/PVA: n-ZnSe metal-oxide-semiconductor diode. PVA: n-ZnSe nanocomposites …

The structural, optical, electrical and photoelectric properties of n-type CdS 1− x Sb x layers
at varied Sb doping concentrations (x= 0, 0.2, 0.4 and 0.6 at.%) were studied. The melt …

The main focus of this framework is the preparation of CdTe nanocrystalline thin films (~ 120
nm) on single crystal p-Si wafers (270 μm) with Miller index (100) using thermal evaporation …