Both two-dimensional (2D) transitional metal dichalcogenides (TMDs) and III–V
semiconductors have been considered as potential platforms for quantum technology. While …

Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …

SnO2 has been extensively applied in the fields of optoelectronic devices because of its
large band gap, high exciton binding energy, and outstanding optical/electrical properties …

Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced
semiconductor materials, is essential and critical for a broad range of applications in …

Van der Waals (vdW) materials have emerged as a promising platform for the generation of
single-photon emitters, attracting considerable interest in the past several years. This …

A van der Waals heterojunction-based photodetector has attracted significant interest due to
its potential for high-speed visible light communication (VLC) application. Herein, we report …

A fundamental understanding and control of impurity incorporation and charge carrier
recombination are critical for emerging Sc x Al 1− x N electronics, optoelectronics, and …

Room temperature (RT) operation is one of the crucial requirements for the practical
applications of single photon emitters. Here, RT triggered single photon emission from self …

Bright, scalable, and deterministic single-photon emission (SPE) is essential for quantum
optics, nanophotonics, and optical information systems. Recently, SPE from hexagonal …

Gallium nitride (GaN) is an advanced semiconductor primarily known for its current
applications in lasers and high-power electronics. With the availability of various growth …