We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

The precise measurement of mechanical stress at the nanoscale is of fundamental and
technological importance. In principle, all six independent variables of the stress tensor …

Test structures consisting of shallow trench isolation (STI) structures are fabricated using
advanced silicon (Si) technology. Different process parameters and geometrical features are …

A new technique was developed to predict the unknown in-plane stress state and the
magnitude of the stress components in 111 silicon wafers using micro-Raman spectroscopy …

A characterization technique was developed for measuring the complete tensor nature of
stress fields in semiconductors. By combining incident light tilted away from the normal axis …

In this article, we will analyze the possibilities that offer the micro-Raman method in the field
of the solid state. Most of the examples that we shall here present are related to …

We examined the lattice strain distribution around local oxidation of silicon (LOCOS) in a
semiconductor device by using highly accurate (1.8× 10− 4 standard deviation) convergent …

Polarized off‐axis Raman spectroscopy is a technique for measuring the complete tensor
nature of stress fields in semiconductors. By combining incident light tilted away from the …

The local lattice strain around the channel in metal–oxide–semiconductor (MOS) field-effect
transistors of 0.1 μm gate length was measured by using convergent-beam electron …

Rotation and strain fields were mapped across silicon-on-insulator (SOI) regions induced by
overlying stressed Si 3 N 4 features using x-ray nanobeam diffraction. The distribution in SOI …