High stable and energy efficient emerging nanoscale CNTFET SRAM cells using circuit level low power techniques
Due to unrelenting progression of silicon technology, the power dissipation has become
important concern in nanometer regime. To limit the power consumption and to improve the …
important concern in nanometer regime. To limit the power consumption and to improve the …
Novel Power Gated (PG) and Sleep Body Bias (SBB) 6T CNTFET-Based SRAM Design for Ultra-Low-Power Application
The leakage power consumption accounts for progressively huge portion of average power
consumption in nanometer regime. To limit the power dissipation, different low-power …
consumption in nanometer regime. To limit the power dissipation, different low-power …
Design of Transmission Gate Based SRAM Using Dynamic Modification Scheme
GM Harshitha, S Madhavan… - … Conference on Ambient …, 2023 - ieeexplore.ieee.org
There is a huge need of thousands of kilobytes of computer memory for various applications
which can function in the sub-threshold domain. SRAM stands for Static Random Access …
which can function in the sub-threshold domain. SRAM stands for Static Random Access …
Performance and Stability Analysis of CNTFET SRAM Cell Topologies for Ultra‐Low Power Applications
Memory is remarkably imperative part of any digital system that occupies the most of the part
of the design, it is the main issue for designers to design the memory module in such a way …
of the design, it is the main issue for designers to design the memory module in such a way …
أداء وفعالية خلايا SRAMs عند الاستخدام في التطبيقات المختلفة
هلال احمد تكروني, د. مجد الدين العلي… - … و الكهربائية و …, 2021 - journal.homs-univ.edu.sy
تعد ذاكرة الوصول العشوائي الستاتيكية (Static Random Access Memory (SRAM)) جزءاً أساسياً
في الدارات عالية التكامل جدا ((VLSI)(Very Large Scale Integration و الأجهزة الإلكترونية وتستخدم …
في الدارات عالية التكامل جدا ((VLSI)(Very Large Scale Integration و الأجهزة الإلكترونية وتستخدم …