Materials and processes for Schottky contacts on silicon carbide
Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are
today essential elements in many applications of power electronics. In this context, the study …
today essential elements in many applications of power electronics. In this context, the study …
[HTML][HTML] Reducing specific contact resistivity for n-type germanium using laser activation process and nano-island formation
This study presents a laser activation process (LAP) for germanium (Ge) to improve the
electrical performance of n-type Ge devices. The LAP highly activated the dopant and …
electrical performance of n-type Ge devices. The LAP highly activated the dopant and …
Thermal sensing capability and current–voltage–temperature characteristics in Pt/n-GaP/Al/Ti Schottky diodes
H Efeoǧlu, A Turut - Journal of Vacuum Science & Technology B, 2023 - pubs.aip.org
We have discussed the thermal sensing capability under a constant current level and current
versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n …
versus voltage (I–V) traces by measuring the temperature of high series resistance Pt/n …
An experimental study: Dependence of Schottky diode parameters on Schottky contact area size
H Efeoǧlu, A Turut, M Gül - Optical Materials, 2023 - Elsevier
We have investigated whether the Schottky barrier diodes (SBD) parameters such as the SB
height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n …
height and ideality factor (IF) change as a function of Schottky contact (SC) area, in the Pt/n …
Thermal sensitivity and barrier height inhomogeneity in thermally annealed and un-annealed Ni/n-6H-SiC Schottky diodes
Abstract The Ni/n-6 H-SiC Schottky barrier diodes (SBDs) have been fabricated. Then, they
have been thermally annealed at 700 o C for 2 min. Their forward bias voltage versus …
have been thermally annealed at 700 o C for 2 min. Their forward bias voltage versus …
[HTML][HTML] Nanoscale Schottky contacts to GaN: Theoretical study and a brief review
Nanostructured GaN materials, including nanowires and nanorods, are advantageous for
nanoscale devices, owing to their higher surface-to-volume ratio than thin films. Despite the …
nanoscale devices, owing to their higher surface-to-volume ratio than thin films. Despite the …
Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts
Abstract The Al/n‒4H–SiC Schottky contacts were prepared and studied their contact
properties by current‒voltage (I− V) characteristics and X‒ray photoelectron spectroscopy …
properties by current‒voltage (I− V) characteristics and X‒ray photoelectron spectroscopy …
Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes
Abstract Ni/n-GaP/Al Schottky diodes have been fabricated and their dielectric
characteristics have been measured in under vacuum ambient. Parameters such as …
characteristics have been measured in under vacuum ambient. Parameters such as …
From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)
The control over the configuration, size and density of Au nanoparticles (NPs) has offered a
promising route to control the spatial confinement of electrons and photons, as a result, Au …
promising route to control the spatial confinement of electrons and photons, as a result, Au …
Barrier properties and current conduction mechanism for metal contacts to lightly and highly doped p-type 4H-SiC
L Huang, Y Ma, S Pan, J Zhu, X Gu - Japanese Journal of …, 2022 - iopscience.iop.org
The barrier properties of Ti, Ni and Pt contact to lightly (9× 10 16 cm− 3) and highly (9× 10 18
cm− 3) doped p-type 4H-SiC were investigated. It is found that the barrier heights and …
cm− 3) doped p-type 4H-SiC were investigated. It is found that the barrier heights and …