High frequency, high efficiency, and high power density gan-based llc resonant converter: State-of-the-art and perspectives
SA Mortazavizadeh, S Palazzo, A Amendola… - Applied Sciences, 2021 - mdpi.com
Soft switching for both primary and secondary side devices is available by using LLC
converters. This resonant converter is an ideal candidate for today's high frequency, high …
converters. This resonant converter is an ideal candidate for today's high frequency, high …
A high voltage multi-purpose on-the-fly reconfigurable half-bridge gate driver for GaN HEMTs in 0.18-μm HV SOI CMOS technology
Intended to be the core design of a configurable and flexible high voltage power system for
aerospace applications, the gate driver in this work is capable of driving a wide range of …
aerospace applications, the gate driver in this work is capable of driving a wide range of …
Simulation Study of a p-GaN HEMT With an Integrated Schottky Barrier Diode
In this article, a novel-GaN high-electron-mobility transistor (HEMT) with a built-in Schottky
barrier diode (SBD) is proposed and investigated by TCAD simulation. The anode contact of …
barrier diode (SBD) is proposed and investigated by TCAD simulation. The anode contact of …
Linear Equivalent Model for VHF Class Φ2 Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss
D Zhang, D Lyu, M Zhang, M Dong, R Min… - IEEE …, 2021 - ieeexplore.ieee.org
Reverse conduction loss of GaN high electron mobility transistors (HEMTs) in very high
frequency (VHF) converters is non-neglectable due to the absence of body diode. To reduce …
frequency (VHF) converters is non-neglectable due to the absence of body diode. To reduce …
A simple approach to improve the switching performance of cascode GaNFETs
Q Tan, S Madathil - 2020 8th International Conference on …, 2020 - ieeexplore.ieee.org
This paper analyses the switching performance of the cascode GaNFETs on Silicon
substrates in three different PCBs using a double pulse test (DPT). A significant Vgs ringing …
substrates in three different PCBs using a double pulse test (DPT). A significant Vgs ringing …
10 MHz boost converter with subthreshold voltage startup and predictive dead‐time techniques for energy‐harvesting systems
W Huang, X Liao, L Liu - IET Power Electronics, 2020 - Wiley Online Library
A 10 MHz synchronous boost converter with the subthreshold startup scheme and predictive
dead‐time control for energy‐harvesting systems is presented in this study. The input feed …
dead‐time control for energy‐harvesting systems is presented in this study. The input feed …
Improved Control of GaN-based Active-clamped FIyback Converter with Shorter Reverse Conduction Time
M Chen, S Xu, L Huang, W Sun - 2020 IEEE Workshop on Wide …, 2020 - ieeexplore.ieee.org
As GaN HEMT can achieve high switching frequency of several MHz easily, it was widely
used in resonant converter for high power density. In this paper, the reverse conduction of …
used in resonant converter for high power density. In this paper, the reverse conduction of …