5,032,545 5,049,516 5,055,319 5,080,928 5,089,084 5, 198,029 5,302.461 5,595,606
5,614,026 5,621,681 5,625,233 5,674.563 5,674,574 5,698,022 5,735,960 5,744,374 …

3,357,961 A 12/1967 Makowski et al. 4,058.430 A 11/1977 Suntola et al. 4.413, 022 A 11,
1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …

PREPARE SUBSTRATE attainable using SiO. Depositing a hafnium metal layer on a
Substrate Surface by atomic layer deposition and depositing a hafnium oxide layer on the …

Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …

4,058.430 4,096,227 4,137,200 4,215,156 4,293,679 4,302,620 4,308.421 4.333, 808
4,358,397 4,368,350 4,372,032 4,394,673 4,399,424 4,403,083 4.413, 022 4,482,516 …

Integrated circuits, the key components in thousands of electronic and computer products,
are generally built layer by layer on a silicon substrate. One common technique for forming …

The ultimate breakdown strength E/sub bd/of a dielectric material is found to decrease as the
dielectric-constant k increases. A thermochemical description of the ultimate breakdown …

Based on the experimental results of the temperature dependence of gate leakage current
and Fowler-Nordheim tunneling characteristics at 77 K, we have extracted the energy band …

In this paper, we explore the scaling limits of alternative gate dielectrics based on their direct-
tunneling characteristics and gate-leakage requirements for future CMOS technology …

We report here that Fermi pinning at the polysilicon/metal-oxide interface causes high
threshold voltages in MOSFET devices. In Part I, we investigated the different gatestack …