When active regions that use low refractive index quantum barriers (LIQB) are combined
with super large optical cavity (SLOC) designs in GaAs-based diode lasers, high-power …

We present a detailed design and experimental study of diode laser structures emitting at
808 nm based on the combination of a GaAsP quantum well with well-established AlGaAs …

We report on the transverse single-mode emission from InGaAs/GaAs quantum well edge-
emitting lasers with broadened waveguide. The lasers are based on coupled large optical …

High-brightness edge-emitting semiconductor lasers having a vertically extended
waveguide structure emitting in the 1060 nm range are investigated. Ridge waveguide (RW) …

For optimal coupled power into fiber, high power diode lasers should operate efficiently with
smallest possible vertical far field emission angle. Although waveguide and cladding layers …

We report on 980 nm In Ga As∕ Al Ga As lasers with a broad waveguide based on a
longitudinal photonic band crystal concept. The beam divergence measured as full width at …

We report on edge-emitting lasers based on the 1-and 2-D longitudinal photonic bandgap
crystal concept. The longitudinal photonic bandgap crystal (PBC) design allows a robust and …

A new waveguiding scheme for high-power diode lasers based on high-index quarter-wave
reflecting layers inserted into the cladding layers is presented. For 808 nm lasers, a small …

This invaluable book provides a comprehensive treatment of design and applications of rare-
earth-doped fiber amplifiers and fiber lasers. Optical fiber amplifier is an important …

High-power double-barrier separate confinement heterostructure (SCH) GaAsP-AlGaAs-
GaAs laser diodes designed for low vertical beam divergence emission at 800-nm band are …