Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …

Fluorite-structure ferroelectrics—in particular the orthorhombic phase of HfO 2—are of
paramount interest to academia and industry because they show unprecedented scalability …

Ferroelectricity in fluorite-structured ferroelectrics such as HfO 2 and ZrO 2 has been
attracting increasing interest since its first publication in 2011. Fluorite-structured …