Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La1–xSrxCoO3−δ Films

V Chaturvedi, WM Postiglione… - … applied materials & …, 2021 - ACS Publications
Much recent attention has focused on the voltage-driven reversible topotactic transformation
between the ferromagnetic metallic perovskite (P) SrCoO3− δ and oxygen-vacancy-ordered …

Phase transition dynamics in a complex oxide heterostructure

Q Zhang, G Hu, V Starchenko, G Wan, EM Dufresne… - Physical Review Letters, 2022 - APS
Understanding the behavior of defects in the complex oxides is key to controlling myriad
ionic and electronic properties in these multifunctional materials. The observation of defect …

[HTML][HTML] Tunable ferroelectricity in oxygen-deficient perovskites with Grenier structure

Y Shin, G Galli - npj Computational Materials, 2023 - nature.com
Using first-principles calculations, we predict that tunable ferroelectricity can be realized in
oxide perovskites with the Grenier structure and ordered oxygen vacancies. Specifically, we …

Low-temperature emergent neuromorphic networks with correlated oxide devices

US Goteti, IA Zaluzhnyy… - Proceedings of the …, 2021 - National Acad Sciences
Neuromorphic computing—which aims to mimic the collective and emergent behavior of the
brain's neurons, synapses, axons, and dendrites—offers an intriguing, potentially disruptive …

Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite–Brownmillerite Transformation in Electrolyte-Gated Ultrathin La0.5Sr0.5CoO3−δ

WM Postiglione, G Yu, V Chaturvedi… - … applied materials & …, 2024 - ACS Publications
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials
properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed …

Origin of metal-insulator transitions in correlated perovskite metals

MC Bennett, G Hu, G Wang, O Heinonen, PRC Kent… - Physical Review …, 2022 - APS
The mechanisms that drive metal-to-insulator transitions (MIT) in correlated solids are not
fully understood, though intricate couplings of charge, spin, orbital, and lattice degrees of …

Predicting the onset of metal–insulator transitions in transition metal oxides—a first step in designing neuromorphic devices

S Zhang, H Vo, G Galli - Chemistry of Materials, 2021 - ACS Publications
Several transition metal oxides, including La1–x Sr x CoO3, are promising materials to
realize resistive switching devices for neuromorphic applications, as they can undergo a …

Cation and anion topotactic transformations in cobaltite thin films leading to Ruddlesden-Popper phases

IT Chiu, MH Lee, S Cheng, S Zhang, L Heki… - Physical Review …, 2021 - APS
Topotactic transformations involve structural changes between related crystal structures due
to a loss or gain of material while retaining a crystallographic relationship. The perovskite …

Metallic Interface between Two Insulating Phases of La1–xSrxCoO3−δ

S Zhang, G Galli - Chemistry of Materials, 2024 - ACS Publications
Metal–insulator transitions occurring in several transition metal oxides (TMOs) can be used
to realize energy-efficient resistive switching devices, which in turn can be utilized as basic …

Influence of crystallinity and stoichiometry on the high temperature semiconductor-metal transition of lanthanum cobalt oxide deposited by reactive dc sputtering

R Bhattacharya, V Gambin - Materials Science in Semiconductor …, 2023 - Elsevier
Lanthanum cobalt oxide (LCO) has garnered growing interest in electronic switch
applications based on its unique insulator to metal transition. A single-step high temperature …