Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN
The submicrometer gate HEMT is fabricated with an ultrathin-barrier (UTB) AlGaN/gallium
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …
[HTML][HTML] Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
In this work, the DC performance and RF characteristics of GaN-based high-electron-
mobility transistors (HEMTs) using the SiNx stress-engineered technique were …
mobility transistors (HEMTs) using the SiNx stress-engineered technique were …
Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiNx stressors
Abstract In this work, AlGaN/GaN HEMTs with dual-layer SiN x stressors (composed of a low-
stress layer and a high-stress layer) were investigated. The low-stress padding layer solved …
stress layer and a high-stress layer) were investigated. The low-stress padding layer solved …
Nitrogen rich PECVD silicon nitride for passivation of Si and AlGaN/GaN HEMT devices
KN Subhani, N Remesh, S Niranjan, S Raghavan… - Solid-State …, 2021 - Elsevier
In this work, we have investigated the material properties of PECVD (Plasma Enhanced
Chemical Vapor Deposition) amorphous Silicon nitride (SiN) films and the influence of …
Chemical Vapor Deposition) amorphous Silicon nitride (SiN) films and the influence of …
Au-Free AlGaN/GaN HEMT on Flexible Kapton Substrate
S Niranjan, R Muralidharan, P Sen… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, we report on the electrical performance of AlGaN/GaN high-electron mobility
transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto …
transistors (HEMTs) fabricated using gold (Au)-free process, after being transferred onto …
Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise
devices' on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with …
devices' on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with …
[图书][B] Stress and strain engineering at nanoscale in semiconductor devices
CK Maiti - 2021 - books.google.com
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts
are being made to co-integrate various functionalities (More-than-Moore) in a single chip …
are being made to co-integrate various functionalities (More-than-Moore) in a single chip …
Process-induced stress tuning to improve linearity performance in AlGaN/GaN HEMTs with SiNx passivation
Strain engineering has proven to be a useful technique for enhancing the performance of
many modern-day transistors. Stress engineering can also have a non-trivial effect on the …
many modern-day transistors. Stress engineering can also have a non-trivial effect on the …
Threshold voltage shift induced by intrinsic stress in gate metal of AlGaN/GaN HFET
H Yazdani, S Chevtchenko, I Ostermay… - Semiconductor Science …, 2021 - iopscience.iop.org
Mechanical stress/strain is altering the charging properties of piezoelectric materials. For
AlGaN and GaN heterostructures, this phenomenon has been described theoretically …
AlGaN and GaN heterostructures, this phenomenon has been described theoretically …