The evolution of microelectronics boosts more scalable and complex circuit designs,
providing high processing speed and greater storage capacity. However, reliability issues …

Ionizing radiation and electromagnetic interference (EMI) can cause single event upset
(SEU) in memory elements. This threat is one of the major concerns when considering the …

As the microelectronics technology continuously advances to deep submicron scales, the
occurrence of Multiple Cell Upset (MCU) induced by radiation in memory devices becomes …

Column-Line-Code (CLC) is an Error Correction Code (ECC) designed to correct multiple
errors in memory devices for critical applications. CLC has originally two decoder modes …

With the widespread of electronics nowadays, Single Event Effects (SEEs) have become a
significant concern, not only for critical applications like aerospace and military but also for …

Multiple Cell Upsets (MCUs) induced by ionizing radiation in memories are becoming more
likely to happen due to the continuous technology scaling down. Error Correction Codes …

3D-memory is one of promising applications in 3D-IC technology. With a 3D integration
technology, the effective density of memories can increase and the interconnect distance …

Hash tables are one of the most commonly used data structures in computing applications.
They are used for example to organize a data set such that searches can be performed …

Due to the emergence of extremely high density memory along with the growing number of
embedded memories, memory yield is an important issue. Memory self-repair using …

3D-memory and processor-memory structures are promising applications of 3D-IC
technology. With 3D integration, the effective density of memories can increase and the …