Porous insulators are utilized in the wiring structure of microelectronic devices as a means of
reducing, through low dielectric permittivity, power consumption and signal delay in …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Integration of new low-κ interlayer dielectrics (ILD) with current damascene schemes is a
continuing issue in the microelectronics industry. During integration of the ILD, processing …

High-k, low leakage thin films are crucial components for dynamic random access memory
(DRAM) capacitors with high storage density and a long storage lifetime. In this work, we …

The resistance to plasma-induced damage of various nanoporous, ultra low-κ porous
SiCOH films used as interconnect dielectric materials in integrated circuits was studied …

Positronium annihilation lifetime spectroscopy (PALS) has been used to depth profile the
densification induced in a porous low-dielectric constant (k) thin film by typical device …

Porous interlayer dielectric films with interconnected pores pose a serious challenge for their
integration into next-generation microchips. The opening of interconnected pores in the …

Atomic layer plasma treatment (ALPT) enhances the corrosion protection of the ZrO 2 film
prepared by thermal-driven ALD mode (TALD-ZrO 2) and further reduces the corrosion rate …

The growth of low dielectric constant (k) Boron Nitride (BN) film on silicon as wel1 as
methylsilsesquioxane-based nanoporous films (LKD-5109) using plasma-discharged …

We report the first measurements of the room temperature thermal conductivity of ultrathin
(12 and 24 nm) barium titanate (BaTiO 3) films prepared by plasma-enhanced atomic layer …