High-efficiency silicon solar cells—materials and devices physics

S Xiao, S Xu - Critical reviews in solid state and materials sciences, 2014 - Taylor & Francis
High-efficiency Si solar cells have attracted great attention from researchers, scientists,
engineers of photovoltaic (PV) industry for the past few decades. Many researchers …

An insight into dislocation density reduction in multicrystalline silicon

S Woo, M Bertoni, K Choi, S Nam, S Castellanos… - Solar Energy Materials …, 2016 - Elsevier
Dislocations can severely limit the conversion efficiency of multicrystalline silicon (mc-Si)
solar cells by reducing minority carrier lifetime. As cell performance becomes increasingly …

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed

I Takahashi, N Usami, K Kutsukake, G Stokkan… - Journal of Crystal …, 2010 - Elsevier
We investigated the generation mechanism of dislocations by comparing dislocation
occurrence in multicrystalline silicon with calculated results of the shear stress on the slip …

Crystal growth behaviors of silicon during melt growth processes

K Fujiwara - International Journal of Photoenergy, 2012 - Wiley Online Library
It is imperative to improve the crystal quality of Si multicrystal ingots grown by casting
because they are widely used for solar cells in the present and will probably expand their …

Emerging technologies in crystal growth of photovoltaic silicon: progress and challenges

M Kivambe, B Aissa, N Tabet - Energy Procedia, 2017 - Elsevier
The Photovoltaic (PV) market is dominated by crystalline silicon materials in the form of high-
quality high-cost Czochralski monocrystalline silicon (mono-Si) and lower-cost defect-prone …

Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth

N Usami, R Yokoyama, I Takahashi… - Journal of Applied …, 2010 - pubs.aip.org
We attempted to clarify relationship between grain boundary structures in Si multicrystals
and generation of dislocations during crystal growth. Systematic variation of grain boundary …

State-of-the-art growth of silicon for PV applications

L Arnberg, M Di Sabatino, EJ Øvrelid - Journal of crystal growth, 2012 - Elsevier
Silicon is widely used in photovoltaic devices. This application requires strict control of the
structure and impurity levels. Silicon must, therefore, be solidified using processes that give …

Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

K Nakajima, R Murai, K Morishita, K Kutsukake… - Journal of crystal …, 2012 - Elsevier
Stress control is necessary when preparing high-quality multicrystalline Si ingots using
crucibles because crystal defects such as dislocations are mainly generated by stress in the …

Dynamics at crystal/melt interface during solidification of multicrystalline silicon

K Fujiwara, LC Chuang, K Maeda - High Temperature Materials and …, 2022 - degruyter.com
A fundamental understanding of crystal growth dynamics during directional solidification of
multicrystalline Si (mc-Si) is crucial for the development of crystal growth technology for mc …

Processing methods of silicon to its ingot: a review

V Prakash, A Agarwal, EK Mussada - Silicon, 2019 - Springer
Any metal must be processed from its ore before employing it in various industrial
applications; this is the similar case with Silicon (Si) as well. Occurring in the form of silicates …