High-deposition rate methods for forming transparent ash able hardmasks (AHMs) that have
high plasma etch selectiv ity to underlying layers are provided. The methods involve placing …

Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to
achieve optimum etch contrast to shrink features and smooth the edges of features while …

Methods and apparatuses for multiple patterning using image reversal are provided. The
methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash …

Provided herein are multi-layer stacks for use in extreme ultraviolet lithography tailored to
achieve optimum etch con trast to shrink features and smooth the edges of features while …

Provided are methods and apparatuses for depositing a graded or multi-layered silicon
carbide film using remote plasma. Agraded or multi-layered silicon carbide film can be …

Described herein are methods of filling features with tungsten, and related systems and
apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods …

(74) Attorney, Agent, or Firm Weaver Austin Villeneuve & Sampson LLP (57) ABSTRACT
Disclosed are methods and systems for providing oxygen doped silicon carbide. A layer of …

Films having high hermeticity and a low dielectric constant can be used as copper diffusion
barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication …

Techniques, systems, and apparatuses for performing carbon gap-fill in semiconductor
wafers are provided. The tech niques may include performing deposition-etching opera tions …

Methods and apparatuses for depositing an encapsulation layer over a staircase structure
during fabrication of a 3D NAND structure to prevent degradation of an oxide-oxide interface …