A 39-GHz 64-element phased-array transceiver with built-in phase and amplitude calibrations for large-array 5G NR in 65-nm CMOS
This article presents the first 39-GHz phased-array transceiver (TRX) chipset for fifth-
generation new radio (5G NR). The proposed transceiver chipset consists of 4 sub-array …
generation new radio (5G NR). The proposed transceiver chipset consists of 4 sub-array …
A fully-integrated 77-GHz FMCW radar transceiver in 65-nm CMOS technology
A fully-integrated FMCW radar system for automotive applications operating at 77 GHz has
been proposed. Utilizing a fractional-synthesizer as the FMCW generator, the transmitter …
been proposed. Utilizing a fractional-synthesizer as the FMCW generator, the transmitter …
Algorithmic design of CMOS LNAs and PAs for 60-GHz radio
T Yao, MQ Gordon, KKW Tang, KHK Yau… - IEEE Journal of Solid …, 2007 - ieeexplore.ieee.org
Sixty-gigahertz power (PA) and low-noise (LNA) amplifiers have been implemented, based
on algorithmic design methodologies for mm-wave CMOS amplifiers, in a 90-nm RF-CMOS …
on algorithmic design methodologies for mm-wave CMOS amplifiers, in a 90-nm RF-CMOS …
Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits
TSD Cheung, JR Long - IEEE Journal of Solid-state circuits, 2006 - ieeexplore.ieee.org
This paper introduces floating shields for on-chip transmission lines, inductors, and
transformers implemented in production silicon CMOS or BiCMOS technologies. The shield …
transformers implemented in production silicon CMOS or BiCMOS technologies. The shield …
Review of Ka-Band power amplifier
Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
Integrated phased array systems in silicon
Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-
wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar …
wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar …
A 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique
YJ Lin, SSH Hsu, JD Jin… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused
technique and a simple high-pass input matching network is proposed. The implemented …
technique and a simple high-pass input matching network is proposed. The implemented …
Integrated self-healing for mm-wave power amplifiers
SM Bowers, K Sengupta, K Dasgupta… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
Self-healing as a technique for improving performance and yield of millimeter-wave power
amplifiers (PAs) against process variation and transistor mismatch, load impedance …
amplifiers (PAs) against process variation and transistor mismatch, load impedance …
A fully integrated 24-GHz phased-array transmitter in CMOS
A Natarajan, A Komijani… - IEEE Journal of solid-state …, 2005 - ieeexplore.ieee.org
This paper presents the first fully integrated 24-GHz phased-array transmitter designed
using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS …
using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS …
Design considerations for 60 GHz transformer-coupled CMOS power amplifiers
D Chowdhury, P Reynaert… - IEEE Journal of Solid …, 2009 - ieeexplore.ieee.org
This work discusses the design methodologies for efficient power generation at mm-wave
frequencies in CMOS. Passive elements play an important role in PA design, as they …
frequencies in CMOS. Passive elements play an important role in PA design, as they …