The use of implanted muons to probe the spin dynamics and electronic excitations in a
variety of magnetic and non-magnetic materials is reviewed and is split into three main …

The use of implanted muons to probe the spin dynamics and electronic excitations in
organic materials is reviewed. At first, a brief introduction to the historical context and …

Early muonium studies provided the very first atomistic pictures of interstitial hydrogen in
semiconductors. By the time ISIS muons came on line, the main crystallographic sites, and …

Since the 1940s, it has been known that diffusion in crystalline solids occurs due to lattice
defects. The diffusion of defects can have a great impact on the processing and heat …

Complexes formed by H and the isoelectronic impurity N in GaAs 1-y N y alloys have been
widely investigated because the significant effects of N on the GaAs properties and their …

The discovery and significance of weakly bound muonium states with low hyperfine
constants in a number of compound semiconductors of the II–VI and III–V (nitride) families …

Gallium nitride (GaN) single crystals were implanted with protons (deuterons) at
temperatures below 20K and studied by infrared absorption spectroscopy at 8K without any …

Muon spin depolarization rates and hyperfine decoupling curves imply the existence of a
neutral muonium center to high temperatures in AlN, providing an experimental model for …

The so-called 'first-principles' theory of defects in semiconductors is very good at predicting
many ground state properties of impurities in periodic supercells at T= 0K. Even though the …

An atomic-like neutral muonium center with a small anisotropy is inferred from hyperfine
decoupling curves and longitudinal relaxation data on AlN. The isotropic contribution of A …