A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics
F Palumbo, C Wen, S Lombardo… - Advanced Functional …, 2020 - Wiley Online Library
Thin dielectric films are essential components of most micro‐and nanoelectronic devices,
and they have played a key role in the huge development that the semiconductor industry …
and they have played a key role in the huge development that the semiconductor industry …
Probing memristive switching in nanoionic devices
Y Yang, R Huang - Nature Electronics, 2018 - nature.com
Memristive switching in nanoionic devices involves the interplay between physical,
electrochemical and thermochemical processes, which can occur in the bulk or at interfaces …
electrochemical and thermochemical processes, which can occur in the bulk or at interfaces …
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
The resistive switching effect in memristors typically stems from the formation and rupture of
localized conductive filament paths, and HfO2 has been accepted as one of the most …
localized conductive filament paths, and HfO2 has been accepted as one of the most …
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
The use of 2D materials to improve the capabilities of electronic devices is a promising
strategy that has recently gained much interest in both academia and industry. However …
strategy that has recently gained much interest in both academia and industry. However …
On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
I Valov - Semiconductor Science and Technology, 2017 - iopscience.iop.org
Redox-based resistive switching memories are nowadays one of the most studied systems
in both academia and industrial communities. These devices are scalable down to an almost …
in both academia and industrial communities. These devices are scalable down to an almost …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Interfacial metal–oxide interactions in resistive switching memories
Metal oxides are commonly used as electrolytes for redox-based resistive switching
memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We …
memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We …
Conductance quantization in resistive random access memory
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
Atomistic Insights on the Full Operation Cycle of a HfO2-Based Resistive Random Access Memory Cell from Molecular Dynamics
We characterize the atomic processes that underlie forming, reset, and set in HfO2-based
resistive random access memory (RRAM) cells through molecular dynamics (MD) …
resistive random access memory (RRAM) cells through molecular dynamics (MD) …