Interconnect metals beyond copper: Reliability challenges and opportunities
K Croes, C Adelmann, CJ Wilson… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
Reliability challenges of candidate metal systems to replace traditional Cu wiring in future
interconnects are discussed. From a reliability perspective, a key opportunity is …
interconnects are discussed. From a reliability perspective, a key opportunity is …
Experimental and computational studies on octyl hydroxamic acid as an environmentally friendly inhibitor of cobalt chemical mechanical polishing
H Wang, L Hu, G Cao, R Xia, J Cao… - ACS Applied Materials …, 2022 - ACS Publications
Octyl hydroxamic acid (OHA) was investigated as an inhibitor in H2O2-based alkaline silica
dispersions for the polishing of cobalt (Co) films for interconnect applications. A combination …
dispersions for the polishing of cobalt (Co) films for interconnect applications. A combination …
Properties of ultrathin molybdenum films for interconnect applications
V Founta, JP Soulié, K Sankaran, K Vanstreels… - Materialia, 2022 - Elsevier
The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …
Atomic layer deposition of transition metal films and nanostructures for electronic and catalytic applications
Atomic layer deposition (ALD) has emerged as the technique of choice in the
microelectronics industry, owing to its self-limiting nature, that allows conformal film …
microelectronics industry, owing to its self-limiting nature, that allows conformal film …
CMOS reliability from past to future: A survey of requirements, trends, and prediction methods
Developments in IC fabrication, emerging high-reliability markets, and government
regulations indicate potential for significant shifts in how reliability fits within IC development …
regulations indicate potential for significant shifts in how reliability fits within IC development …
Ammonium persulfate and potassium oleate containing silica dispersions for chemical mechanical polishing for cobalt interconnect applications
CK Ranaweera, NK Baradanahalli… - ECS Journal of Solid …, 2018 - iopscience.iop.org
We investigated the suitability of ammonium persulfate (APS) and potassium oleate (PO)
containing silica dispersions for polishing Co interconnects based on removal and …
containing silica dispersions for polishing Co interconnects based on removal and …
Finite size effects in highly scaled ruthenium interconnects
Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits.
Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the …
Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the …
Resistivity size effect in epitaxial Rh (001) and Rh (111) layers
Rh (001) and Rh (111) layers with thickness d= 8-181 nm are sputter deposited onto MgO
(001) and Al2O3 (112̅0) substrates and their resistivity ρ measured in situ and ex situ at …
(001) and Al2O3 (112̅0) substrates and their resistivity ρ measured in situ and ex situ at …
The role of carboxylic acids on nanoparticle removal in post CMP cleaning process for cobalt interconnects
L Zhang, X Lu, AA Busnaina - Materials Chemistry and Physics, 2022 - Elsevier
As the technology node moves below 10 nm, cobalt with its low resistivity, superior adhesion
property, and wettability with copper, promises to change the conductor landscape in many …
property, and wettability with copper, promises to change the conductor landscape in many …
Buried power rail integration with FinFETs for ultimate CMOS scaling
Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node.
This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si …
This work demonstrates, for the first time, the integration of tungsten (W) BPR lines with Si …