III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam
epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for …

We present detailed investigations of the structural, elastic, dielectric, and piezoelectric
properties of scandium aluminum nitride (Sc x Al 1− x N) with the wurtzite crystal structure by …

Alloys of scandium with AlN exhibit an enhanced piezoelectric coefficient that can boost the
performance of nitride‐based electronic and optoelectronic devices such as high electron …

We demonstrate robust ferroelectricity in single-crystalline wurtzite phase N-polar
ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular …

The piezoelectric and spontaneous polarization of wurtzite Sc x Al 1− x N, Ga x Al 1− x N,
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …

Molecular beam epitaxy of single-phase wurtzite N-polar Sc x Al 1− x N (x∼ 0.11–0.38) has
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …

Incorporating rare earth element scandium (Sc) into III-nitride wurtzite lattice offers
remarkable non-oxide ferroelectrics, tunable spontaneous polarization coefficients, and …

Epitaxial Sc x Al 1− x N thin films of∼ 100 nm thickness grown on metal polar GaN
substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r) …

AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of
the high potential of such structures for high-frequency and high-power electronic …