Recent progress of deep ultraviolet photodetectors using amorphous gallium oxide thin films

H Liang, Z Han, Z Mei - physica status solidi (a), 2021 - Wiley Online Library
Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields.
Many materials have been explored to realize deep UV photodetection. Amorphous gallium …

Focused review on print‐patterned contact electrodes for metal‐oxide thin‐film transistors

F Liu, L Gillan, J Leppäniemi… - Advanced Materials …, 2023 - Wiley Online Library
Metal‐oxide‐semiconductor‐based thin‐film transistors (TFTs) are exploited in display
backplanes and X‐ray detectors fabricated by vacuum deposition and lithographic …

Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing

E Fortunato, R Barros, P Barquinha… - Applied Physics …, 2010 - pubs.aip.org
P-type thin-film transistors (TFTs) using room temperature sputtered SnO x (x< 2) as a
transparent oxide semiconductor have been produced. The SnO x films show p-type …

[图书][B] Transparent oxide electronics: from materials to devices

P Barquinha, R Martins, L Pereira, E Fortunato - 2012 - books.google.com
Transparent electronics is emerging as one of the most promising technologies for the next
generation of electronic products, away from the traditional silicon technology. It is essential …

Indium gallium oxide alloys: Electronic structure, optical gap, surface space charge, and chemical trends within common-cation semiconductors

JEN Swallow, RG Palgrave… - … applied materials & …, 2021 - ACS Publications
The electronic and optical properties of (In x Ga1–x) 2O3 alloys are highly tunable, giving
rise to a myriad of applications including transparent conductors, transparent electronics …

High-performance thin-film transistors with an atomic-layer-deposited indium gallium oxide channel: A cation combinatorial approach

HJ Yang, HJ Seul, MJ Kim, Y Kim, HC Cho… - … applied materials & …, 2020 - ACS Publications
The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited
indium gallium oxide (IGO)(In1–x Ga x O) films as high-mobility n-channel semiconducting …

[HTML][HTML] Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

S Aikawa, T Nabatame, K Tsukagoshi - Applied Physics Letters, 2013 - pubs.aip.org
Amorphous metal oxide thin-film transistors (TFTs) are fabricated using InO x-based
semiconductors doped with TiO 2, WO 3, or SiO 2. Even at low-dopant densities, the …

Hydrogen-doping-enabled boosting of the carrier mobility and stability in amorphous IGZTO transistors

J Lee, CH Choi, T Kim, J Hur, MJ Kim… - … Applied Materials & …, 2022 - ACS Publications
This study investigated the effect of hydrogen (H) on the performance of amorphous In–Ga–
Zn–Sn oxide (a-In0. 29Ga0. 35Zn0. 11Sn0. 25O) thin-film transistors (TFTs). Ample H in …

Plasma-enhanced atomic layer deposition assisted low-temperature synthetic routes to rationally designed metastable C-axis aligned hexagonal In-Zn-O

TH Hong, HW Kim, YS Kim, HJ Jeong… - Chemistry of …, 2023 - ACS Publications
Efforts to design and realize exotic metastable phases with advanced characteristics have
been ongoing. However, the challenge lies in identifying their atomic structures and …

Exploration of chemical composition of In–Ga–Zn–O system via PEALD technique for optimal physical and electrical properties

TH Hong, YS Kim, SH Choi, JH Lim… - Advanced Electronic …, 2023 - Wiley Online Library
Abstract In–Ga–Zn–O (IGZO) material has been researched due to its favorable electrical
characteristics for application in thin‐film transistor (TFT) applications such as low off current …