A sustainable energy future requires power electronics that can enable significantly higher
efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide …

Here, we report on the chemistry and structure of 4H-SiC/SiO 2 interfaces passivated either
by nitric oxide annealing or Ba deposition. Using aberration corrected scanning …

The lattice defects in graphene-based carbon materials have been proven to play a critical
role for improving the hydrogen evolution reaction (HER) behavior of supported metal …

The selectivity of electrically detected magnetic resonance (EDMR) is utilized to probe the
dominant recombination defect at the Si-face 4H-SiC/SiO 2 interface. The nature of this …

In the processing of 4H-SiC MOSFET devices, it is crucial to optimize the condition of wet
oxidation based on the wafer surface orientation to obtain excellent electronic properties …

In this work, the origin of the low free electron mobility in SiC MOSFETs is investigated using
the scattering theory of two-dimensional electron gases. We first establish that neither …

This work reports the influence of post-trench treatment on electron scattering mechanisms
in 4H-silicon carbide (SiC) trench MOSFETs. The mobilities representing different scattering …

Understanding the microscopic structure of the SiC/SiO2 interface is crucial for the
improvement of SiC based metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). It …

We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO 2.
Interestingly, the electron transport at the conduction-band edge is significantly affected by …

Chemical and structural features of (201) β-Ga2O3 interfaces with SiO2 and Al2O3 gate
oxides formed by low pressure chemical vapor deposition (SiO2) and atomic layer …