We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …

Phase change materials (PCMs) can exist in at least two different phases (an amorphous
and one or more crystalline phases), and they can be switched repeatedly between these …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

In this paper, a 90-nm 128-Mcell non-volatile memory based on phase-change
Ge_2\mathchar"707BSb_2\mathchar"707BTe_5 alloy is presented. Memory cells are bipolar …

Amorphous chalcogenides have been extensively studied over the last half century due to
their application in rewritable optical data storage and in non-volatile phase change memory …

The NAND flash memory serves as the key enabler of the flourishing of portable handheld
information devices, such as the cellular phone. The recent upsurge in the sales of vertical …

Sb2Te3 exhibits outstanding performance among the candidate materials for phase-change
memory; nevertheless, its low electrical resistivity and thermal stability hinder its practical …

FET technologies can be used as program selectors or One Time Programmable (OTP)
element in a programmable resis tive device. Such as interconnect fuse, contact/via fuse …

Physical unclonable function (PUF) leverages the immensely complex and irreproducible
nature of physical structures to achieve device authentication and secret information …

Emerging nonvolatile memory with an oxide–semiconductor-based thin-film transistor (TFT)
using indium-gallium-zinc-oxide (IGZO) was developed. The memory is called nonvolatile …