Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes
continue to be one of the most useful THz devices. As a low-parasitic device that operates …

We report on the design, fabrication, and testing of a new generation of all-solid-state
frequency-multiplied terahertz sources providing up to ten times more output power at room …

As space instruments become ubiquitous along with advancing capabilities, one of the
central challenge is to provide more efficient communication links, between the control …

We developed a novel terahertz-wave detector fabricated on a SiC platform implementing
an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were …

There is a high demand for compact, room-temperature sources operating at millimeter-
wave and terahertz (THz) frequencies for space instruments and terrestrial applications. This …

A resonant tunneling diode (RTD)-based oscillator operating at an output operation
frequency of 1.52 THz is proposed. The proposed oscillator utilizes a unique negative …

This paper presents a comprehensive overview of the development and utilization of a
micromachined silicon-on-insulator (SOI) fabrication process that has enabled the …

In this paper, we present the analysis, design, and characterization of the first frequency
multiplier using distributed superconductor-insulator-superconductor (SIS) junctions. We …

A sub-harmonic mixer for the 220–325 GHz band was developed using a SiC platform for
the first time. An anti-parallel Fermi-level managed barrier diode pair was monolithically …

This paper will discuss resonant tunnelling diode (RTD) sources being developed on a
European project iBROW (ibrow. project. eu) to enable short-range multi-gigabit wireless …